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DTSTART:19810329T030000
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UID:DSC-22583
DTSTART;TZID=Europe/Berlin:20260224T090000
SEQUENCE:1771915115
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20260224T100000
URL:https://dresden-science-calendar.org/calendar/de/detail/22583
LOCATION:IFW\, Helmholtzstraße 2001069 Dresden
SUMMARY:Makushko: Flexomagnetism and vertically graded Néel temperature of
  antiferromagnetic Cr2O3 thin films
CLASS:PUBLIC
DESCRIPTION:Speaker: Pavlo Makushko\nInstitute of Speaker: Helmholtz Zentru
 m Dresden Rossendorf\nTopics:\n\n Location:\n  Name: IFW (D2E.27\, IFW Dre
 sden)\n  Street: Helmholtzstraße 20\n  City: 01069 Dresden\n  Phone: \n  
 Fax: \nDescription: The skyrocketing demand for computational power\, endo
 rsed by the advancements in artificial intelligence and neuromorphic compu
 ting\, necessitates the development of beyond-CMOS spintronic devices that
  exhibit ultrafast non-volatile memory and logic capabilities in conjuncti
 on with pure voltage control of magnetic degree of freedom. These requirem
 ents can be satisfied through the use of magnetoelectric insulating antife
 rromagnets\, serving as fundamental building blocks for the spintronic dev
 ices. This study explores the prospectives of room-temperature magnetoelec
 tric antiferromagnet chromium oxide Cr2O3 in this field. The magnetic prop
 erties of chromia are being tailored by engineering the persistent epitaxi
 al strain gradients. By combining the electrical transport with nitrogen v
 acancy magnetometry techniques\, a number of novel fundamental phenomena w
 ere identified\, namely the surface-induced symmetry break magnetization a
 nd a new type of flexomagnetic effect in chromia. The performed fundamenta
 l materials science studies have enabled the exploration of several techno
 logically significant milestones\, such as the electrical access to the ma
 gnetic state of strained magnetoelectric Cr2O3 and the increase of Neel te
 mperature of insulating antiferromagnet via the engineered strain gradient
 s. The Neel temperature of the epitaxially strained 50-nm-thick Cr2O3 incr
 eased from 37°C up to beyond 100°C\, covering the requirements of consum
 er electronics.
DTSTAMP:20260308T011713Z
CREATED:20260113T063939Z
LAST-MODIFIED:20260224T063835Z
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