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UID:DSC-22093
DTSTART;TZID=Europe/Berlin:20250703T150000
SEQUENCE:1751521063
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20250703T160000
URL:https://dresden-science-calendar.org/calendar/en/detail/22093
LOCATION:IFW\, Helmholtzstraße 2001069 Dresden
SUMMARY:Klinke: Charge Transport in Colloidal Nanomaterials
CLASS:PUBLIC
DESCRIPTION:Speaker: Prof. Dr. Christian Klinke\nInstitute of Speaker: Univ
 ersität Rostock\, Institute of Physics\nTopics:\n\n Location:\n  Name: IF
 W (Hörsaal\, IMW)\n  Street: Helmholtzstraße 20\n  City: 01069 Dresden\n
   Phone: \n  Fax: \nDescription: Ultrathin\, atomically flat\, two-dimensi
 onal semiconductor nanocrystals receive rapidly increasing  attention due 
 to their unique physicochemical properties.  I will show that ZnS nanoplat
 elets exhibit sharp excitonic absorption and narrow excitonic emission. I 
 will demonstrate that direct manganese doping leads to tunable emission an
 d photoluminescence lifetime. The initially low dopant PL quantum yield ca
 n be dramatically enhanced by passivating the surface trap states of the s
 amples. Using time-resolved PL spectroscopy and density functional theory 
 calculations\, a connection between coupling and PL kinetics of Mn ions ca
 n be established. We believe that the presented doping strategy and simula
 tion methodology of the Mn-doped ZnS system is a universal platform to stu
 dy dopant location- and concentration-dependent properties also in other s
 emiconductors and might be an interesting system for catalysis. In the sec
 ond part of my talk\, I will present concepts for transistors based on col
 loidal metal nanoparticles and nanoclusters. We combine high-quality chemi
 cal synthesis of the materials with scalable surface deposition methods an
 d lithography techniques. Eventually\, the resulting transistors show high
  on/off ratios\, reliable transfer characteristics\, and good room tempera
 ture operation. Furthermore\, this concept allows for versatile tuning of 
 the device properties. The results demonstrate the potential of metal part
 icles as solution processed materials for semiconducting devices.
DTSTAMP:20260409T221024Z
CREATED:20250625T053834Z
LAST-MODIFIED:20250703T053743Z
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